Tunable Hf_xTi_1-xO₂ Dielectrics for Low-Power and High-Performance GAA Nanowire MOSFETs

Gate-All-Around (GAA) Nanowire MOSFET devices offer exceptional advantages, such as enhanced electron mobility, reduced power consumption, and faster switching speeds, making them highly suitable for advanced computing, IoT, and telecommunications applications. This study explores the design of various P-Channel Hetero-Dielectric Single-Metal GAA Nanowire devices utilizing tunable Hf<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf>Ti<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> high-k dielectric materials within a TCAD simulation environment. The proposed devices are designed with an 8nm radius, a 21nm channel length, and customizable high-k dielectrics. Different dielectric configurations are analyzed, demonstrating optimal electrical and digital performance. Notably, the engineered devices achieve a significant reduction in leakage current, lowering it from 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-9</sup>A to 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-14</sup>A compared to conventional GAA MOSFETs, making them highly effective for low-power applications.