1V, 12ppm/°C Bandgap Reference Circuit Design in CMOS Technology

Paper presents a design methodology for a high precision bandgap reference voltage circuit designed in 65 nm CMOS technology. The proposed structure achieves a nominal output voltage of 1 V with a low temperature coefficient of 11.89 ppm/°C, ensuring stability across a temperature range from 0-100 °C. Key performance metrics include a power supply rejection ratio of -51 dB and robust operation over a supply voltage range of 1.6-2.5 V, making it suitable for power management in low energy-harvesting applications.

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Publication Details

Published
2025-05-06
DOI
https://doi.org/10.1109/ic2em63689.2025.11101163
Citations
1
Primary Topic
Analog and Mixed-Signal Circuit Design
Type
article
Field-Weighted Citation Impact
0.67
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article

1V, 12ppm/°C Bandgap Reference Circuit Design in CMOS Technology

Sid Ahmed Tedjini, Sonia Salhi, Abdelhalim Slimane
1 citations
Analog and Mixed-Signal Circuit Design
0.67
article

1V, 12ppm/°C Bandgap Reference Circuit Design in CMOS Technology

Sid Ahmed Tedjini, Sonia Salhi, Abdelhalim Slimane
article en
1 citations

Abstract

Paper presents a design methodology for a high precision bandgap reference voltage circuit designed in 65 nm CMOS technology. The proposed structure achieves a nominal output voltage of 1 V with a low temperature coefficient of 11.89 ppm/°C, ensuring stability across a temperature range from 0-100 °C. Key performance metrics include a power supply rejection ratio of -51 dB and robust operation over a supply voltage range of 1.6-2.5 V, making it suitable for power management in low energy-harvesting applications.

University of Algiers 3 (DZ)
Affordable and clean energy
Openalex Percentile: Top 28%
Analog and Mixed-Signal Circuit Design
0.67
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