1V, 12ppm/°C Bandgap Reference Circuit Design in CMOS Technology
Paper presents a design methodology for a high precision bandgap reference voltage circuit designed in 65 nm CMOS technology. The proposed structure achieves a nominal output voltage of 1 V with a low temperature coefficient of 11.89 ppm/°C, ensuring stability across a temperature range from 0-100 °C. Key performance metrics include a power supply rejection ratio of -51 dB and robust operation over a supply voltage range of 1.6-2.5 V, making it suitable for power management in low energy-harvesting applications.
Authors
- Sid Ahmed Tedjini (ORCID: https://orcid.org/0000-0002-1614-6034)
- Sonia Salhi (ORCID: https://orcid.org/0000-0002-5883-6041)
- Abdelhalim Slimane
Institutions
- University of Algiers 3 (DZ)
Publication Details
- Published
- 2025-05-06
- DOI
- https://doi.org/10.1109/ic2em63689.2025.11101163
- Citations
- 1
- Primary Topic
- Analog and Mixed-Signal Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.67