Design of Inverse Class-E Power Amplifier Based on GaN HEMT Cross-Quadrant Operation

This paper utilizes the cross-quadrant working mode based on GaN HEMT and proposes a cross-quadrant inverse Class-E power amplifier design. This design realizes the flexible adjustment of design parameters and broadens the effective conduction time. Theoretical analysis indicates that this design has a more flexible range of parameter selection and a higher power output. To verify the feasibility of the theoretical analysis, an experimental prototype with an output power of 2W was designed. The results are consistent with the theoretical analysis, which proves the validity of the design.