Theoretical Investigation of the Influence of Temperature and Indium Composition on Intersubband Absorption in InGaN/GaN QW
The optical and structural properties of a Zinc Blende (ZB) InGaN single quantum well (QWs) grown on a GaN barriers have been analyzed theoretically, considering different indium (In) amounts and temperature (T) levels. To achieve this, the concentration of indium was varied from 0% to 40%. The eigenvalues and eigenfunctions corresponding to this configuration were found by numerically solving the Schrödinger equation. Both of these factors play a crucial role in affecting various properties of the InGaN/GaN structure, including the band gap energy (E<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</inf>) and the absorption coefficient (α) related to the intersubband transitions (ISBT). These findings indicate that the In<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf>Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf>N/GaN structure has the potential to facilitate the development of innovative devices based on ISBT, opening new avenues for Mid-IR technology.
Authors
- Jean‐Pierre Vilcot (ORCID: https://orcid.org/0000-0002-6448-4740)
- L. Chenini (ORCID: https://orcid.org/0000-0002-2554-1730)
- A. Aissat (ORCID: https://orcid.org/0000-0003-3635-8568)
- Samuel Dupont (ORCID: https://orcid.org/0000-0003-3588-0506)
- S. Nacer (ORCID: https://orcid.org/0000-0001-7031-4193)
Institutions
- Centre National de la Recherche Scientifique (FR)
- University of Algiers Benyoucef Benkhedda (DZ)
- Institut d'Electronique, de Microélectronique et de Nanotechnologie (FR)
- University of Blida (DZ)
Publication Details
- Published
- 2025-05-06
- DOI
- https://doi.org/10.1109/ic2em63689.2025.11100834
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00