Electrical Modeling and Design of Coaxial Through-Silicon Via Compatible with Deep Trench Capacitor Process for 3D RF System Integration

This study investigates the theoretical principles of the skin effect and impedance matching, analyzing their influence on high-frequency signal transmission. An innovative process utilizing dual-layer copper-plated coaxial throughsilicon vias (TSVs) is proposed to address the challenges of modern microelectronic packaging. A comparative analysis is conducted with traditional coaxial TSV and deep trench capacitor (DTC) processes. Through modeling and simulation, the S21 parameters of two dual-layer copper-plated coaxial TSV designs are evaluated and compared with those of traditional coaxial TSVs. Simulation results demonstrate that, over the frequency range of 2 GHz to 50 GHz, the proposed designs exhibit transmission performance that matches or exceeds that of traditional coaxial TSVs. This confirms that dual-layer copper-plated coaxial TSVs not only ensure compatibility with DTC processes but also enhance highfrequency transmission, offering a novel solution for advanced electronic packaging.