A Low-Power Reference Current Circuit for Uhf Rfid Tags

A novel CMOS subthreshold current reference circuit with an output current of 65 nA is designed. In some cases, the designed Proportional to Absolute Temperature (PTAT) current temperature coefficient values deviate significantly from the positive temperature coefficient values, and the Complementary to Absolute Temperature (CTAT) current temperature coefficient values deviate significantly from the negative temperature coefficient values. This paper proposes a technique of subtracting large temperature coefficient currents and adding them with small temperature coefficients to realize the temperature compensation of the reference currents, and a common source and common gate current mirror structure is used to improve the power supply rejection ratio (PSRR). The proposed current reference is fabricated in a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.18 \mu ~\mathrm{m}$</tex> CMOS process. Measurements show a temperature coefficient of output current of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$129 \text{ppm} /{ }^{\circ} \mathrm{C}$</tex> over the range of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$-20^{\circ} \mathrm{C}$</tex> to 100° C, a power supply rejection ratio of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$-160 ~\text{dB} {@} 10 \mathrm{k} \text{Hz}$</tex> with a 2 V supply, and a linearity of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2.6 \% / \mathrm{V}$</tex> over a supply voltage range of 1.2 V to 3.2 V. In addition, the power dissipation is 740 nW with an area of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$156 * 156 \mathbf{\mu m}^{\mathbf{2}}$</tex>. It is suitable for low-power applications.

Authors

Institutions

Publication Details

Published
2025-05-23
DOI
https://doi.org/10.1109/icccas65806.2025.11102593
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

A Low-Power Reference Current Circuit for Uhf Rfid Tags

Wanlin Gao, Wan’ang Xiao, Hong Qin, Zhiwen Hou
1 links
Advancements in Semiconductor Devices and Circuit Design
article

A Low-Power Reference Current Circuit for Uhf Rfid Tags

Wanlin Gao, Wan’ang Xiao, Hong Qin, Zhiwen Hou
article en

Abstract

A novel CMOS subthreshold current reference circuit with an output current of 65 nA is designed. In some cases, the designed Proportional to Absolute Temperature (PTAT) current temperature coefficient values deviate significantly from the positive temperature coefficient values, and the Complementary to Absolute Temperature (CTAT) current temperature coefficient values deviate significantly from the negative temperature coefficient values. This paper proposes a technique of subtracting large temperature coefficient currents and adding them with small temperature coefficients to realize the temperature compensation of the reference currents, and a common source and common gate current mirror structure is used to improve the power supply rejection ratio (PSRR). The proposed current reference is fabricated in a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.18 \mu ~\mathrm{m}$</tex> CMOS process. Measurements show a temperature coefficient of output current of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$129 \text{ppm} /{ }^{\circ} \mathrm{C}$</tex> over the range of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$-20^{\circ} \mathrm{C}$</tex> to 100° C, a power supply rejection ratio of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$-160 ~\text{dB} {@} 10 \mathrm{k} \text{Hz}$</tex> with a 2 V supply, and a linearity of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2.6 \% / \mathrm{V}$</tex> over a supply voltage range of 1.2 V to 3.2 V. In addition, the power dissipation is 740 nW with an area of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$156 * 156 \mathbf{\mu m}^{\mathbf{2}}$</tex>. It is suitable for low-power applications.

Institute of Semiconductors (CN), China Agricultural University (CN)
Affordable and clean energy
Openalex Percentile: Top 81%
Advancements in Semiconductor Devices and Circuit Design
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

A Low-Power Reference Current Circuit for Uhf Rfid Tags — Wanlin Gao, Wan’ang Xiao, et al. · (2025) | TGRS Research Map | TGRS