Ultra-High Frequency Zinc-Oxide Schottky Diodes for Large-Area Wireless Systems
Recent large-area electronics (LAE) research has created key circuits and systems for wireless systems in the Internet of Things and 5G/6G [1], [2]. Among LAE devices, thin-film Schottky diodes typically reach higher frequencies than thin-film transistors (TFTs) thus providing critical functionality for wireless circuits. GHz thin-film Schottky diodes have been reported [3–7]. Their monolithic integration through LAE technologies could overcome the cost and reliability barriers facing the integration of discrete devices over large areas. However, low-temperature, plastic substrate compatible LAE processing remains a challenge to reaching high frequencies.
Authors
- Xiaoyang Ma (ORCID: https://orcid.org/0000-0001-6633-9398)
- S. Wagner (ORCID: https://orcid.org/0000-0002-3222-4071)
- Naveen Verma (ORCID: https://orcid.org/0000-0002-8208-5030)
- James C. Sturm
Institutions
- Princeton University (US)
Publication Details
- Published
- 2025-06-22
- DOI
- https://doi.org/10.1109/drc66027.2025.11105725
- Primary Topic
- Semiconductor materials and interfaces
- Type
- article
- Field-Weighted Citation Impact
- 0.00