A Compact Silicon-Based Millimeter-Wave Bandpass Filter Using DGS Resonators

This paper presents a compact millimeter-wave bandpass filter (BPF) designed on a high-resistivity silicon (HRS) substrate. By etching a defected ground structure (DGS) on the ground plane to form the resonators with feeding lines, the filter only consists of one metal layer on the HRS substrate surface. Accordingly, a very compact size can be achieved. Two spiral-shaped DGS resonators and one U-shaped DGS resonator are utilized to realize a third-order bandpass filtering response. Due to the cross coupling among different resonators and the source-load coupling, three transmission zeros are generated at two sides of the passband, which greatly enhances the skirt selectivity of the proposed filter. For verification, a filter centered at 26.4 GHz with a 1-dB FBW of 29.2 % is designed. Simulated results show good performance, which is attractive to 5 G millimeter-wave applications.

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Publication Details

Published
2025-05-23
DOI
https://doi.org/10.1109/iwrfat65352.2025.11103072
Primary Topic
Microwave Engineering and Waveguides
Type
article
Field-Weighted Citation Impact
0.00

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article

A Compact Silicon-Based Millimeter-Wave Bandpass Filter Using DGS Resonators

Hui‐Yang Li, Xiu Yin Zhang, Jin‐Xu Xu, Kai Yu
Microwave Engineering and Waveguides
article

A Compact Silicon-Based Millimeter-Wave Bandpass Filter Using DGS Resonators

Hui‐Yang Li, Xiu Yin Zhang, Jin‐Xu Xu, Kai Yu
article en

Abstract

This paper presents a compact millimeter-wave bandpass filter (BPF) designed on a high-resistivity silicon (HRS) substrate. By etching a defected ground structure (DGS) on the ground plane to form the resonators with feeding lines, the filter only consists of one metal layer on the HRS substrate surface. Accordingly, a very compact size can be achieved. Two spiral-shaped DGS resonators and one U-shaped DGS resonator are utilized to realize a third-order bandpass filtering response. Due to the cross coupling among different resonators and the source-load coupling, three transmission zeros are generated at two sides of the passband, which greatly enhances the skirt selectivity of the proposed filter. For verification, a filter centered at 26.4 GHz with a 1-dB FBW of 29.2 % is designed. Simulated results show good performance, which is attractive to 5 G millimeter-wave applications.

South China University of Technology (CN)
National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities
Affordable and clean energy
Openalex Percentile: Top 81%
Microwave Engineering and Waveguides
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