Demonstration of sputtered ScAlN/MOVPE-AlGaN/AlN/GaN HEMT
ScAlN is an attractive material as a barrier layer for high-frequency GaN high electron mobility transistors (HEMTs), owing to its wide-bandgap, strong polarization and ferroelectricity [1]. The regrowth of ScAlN on an $\mathrm{AlGaN} / \mathrm{GaN}$ HEMT structure provides process flexibility as well as new functionalities, such as enhancement and switching of the 2DEG. In this study, we demonstrate the regrowth of ScAlN using a sputtering method [2, 3] on AlGaN/AlN/GaN heterostructure, and fabricate and characterize ScAlN/AlGaN/AlN/GaN HEMTs.
Authors
- Takuya Maeda (ORCID: https://orcid.org/0000-0002-2736-5611)
- Takahiko Kawahara (ORCID: https://orcid.org/0009-0006-1907-268X)
- K. Kubota (ORCID: https://orcid.org/0009-0008-3865-679X)
- Atsushi Kobayashi (ORCID: https://orcid.org/0000-0001-5795-6490)
- Ken Nakata
- Shigeki Yoshida (ORCID: https://orcid.org/0000-0001-6288-7629)
- Kozo Makiyama (ORCID: https://orcid.org/0009-0005-3026-1724)
- Yusuke Wakamoto (ORCID: https://orcid.org/0009-0007-7340-0899)
Institutions
- Tokyo University of Information Sciences (JP)
- Tokyo University of Technology (JP)
- Tokyo University of Science (JP)
- Sumitomo Electric Industries (Japan) (JP)
- Tokyo University of Agriculture and Technology (JP)
Publication Details
- Published
- 2025-06-22
- DOI
- https://doi.org/10.1109/drc66027.2025.11105764
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- ACT-X