Investigation and Reduction of Thermal Resistance in Gate-All-Around Indium Tin Oxide Nanosheet Field-Effect Transistors
Amorphous oxide semiconductors, such as indium tin oxide (ITO), have gained attention for their largescale, low-temperature deposition, making them attractive for back-end-of-line (BEOL) integration [1–4]. Recently, gate-all-around (GAA) nanosheet field-effect transistors (NSFETs) [2–4] with oxide channels have shown promise for driving BEOL-integrated memories, such as magnetoresistive random access memory (MRAM) [2]. However, oxides have low thermal conductivity, and temperature rise during operation of high-performance access transistors could adversely affect reliability [5, 6]. The thermal characteristics of GAA NSFETs with ITO channel have not been explored, to date.
Authors
- Haotian Su (ORCID: https://orcid.org/0009-0002-7113-0390)
- Kenneth E. Goodson (ORCID: https://orcid.org/0000-0001-6875-6785)
- Mehdi Asheghi (ORCID: https://orcid.org/0000-0002-2991-8523)
- Maritha A. Wang (ORCID: https://orcid.org/0009-0002-6160-5030)
- Shan X. Wang (ORCID: https://orcid.org/0000-0001-8420-9554)
- Eric Pop (ORCID: https://orcid.org/0000-0003-0436-8534)
- Young Suh Song (ORCID: https://orcid.org/0000-0002-5229-1693)
- Yuan-Mau Lee (ORCID: https://orcid.org/0009-0005-2159-9547)
- Robert K. A. Bennett (ORCID: https://orcid.org/0000-0001-7427-8724)
- Zherui Han (ORCID: https://orcid.org/0000-0001-6009-2566)
- L. Min
Institutions
- École Nationale des Greffes (FR)
Publication Details
- Published
- 2025-06-22
- DOI
- https://doi.org/10.1109/drc66027.2025.11105746
- Citations
- 2
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 1.46