Leveraging Capacitance Modulation of ReRAM for CMOS-ReRAM Image Sensor

The rapid expansion of applications in the Internet of Things, biomedical imaging, unmanned aerial vehicle imaging, and smart devices drives the increasing demand for advanced image sensors. Conventional CMOS image sensors (CIS) are widely employed in these domains but are limited by their relatively low dynamic range (DR). Resistive random-access memory (ReRAM) devices, recognized as promising candidates for nextgeneration memory technologies, have been predominantly studied for applications in storage and computing. However, their inherent capacitance, arising from their metal-insulator-metal structure, remains underexplored. In this work, we propose a novel hybrid CMOS-ReRAM image sensor (CRIS) to enhance dynamic range without compromising fill factor, addressing the limitations of CIS in high-exposure conditions.