Comparative Study of Double gate FeFET and Multi-gate FeFET for Low Power Circuit Applications

FeFETs have made low power circuit uses more viable by utilizing their special ferroelectric qualities to improve efficiency and performance. The prospects for low-power uses of Double Gate (DG) and Multi-Gate (MG) FeFET structures is the main focus of this study's thorough comparison investigation. The potential of both DG FeFETs and MG FeFETs is noteworthy because of their fast speed, low power consumption, and non-volatility. By applying gate voltages on both sides of the channel, the DG FeFET architecture provides enhanced channel control, better electrostatic control, and a reduction in short-channel effects. On the other hand, MG FeFETs, such as FinFET and Gate-All-Around (GAA) architectures, offer better gate control and higher scalability, which further reduces leakage currents and increases subthreshold swing.