Enhancing Tunneling Current Using MFMIS Nanowire TFET for Low-Power Applications

This study compares the traditional silicon nanowire TFET (Si-NW-TFET) with a low band gap material and Si-Ge source Metal Ferroelectric metal insulator semiconductor (MFMIS) nanowire TFET. The suggested device has a steeper characteristic and a higher ON current. The proposed device has a drive current in the order of microns and a subthreshold swing of 39 mV/dec. The electrical properties of MFMIS NW-TFETs have been investigated using the Silvaco TCAD. Channel size and output (gate voltage-drain current) characteristics were simulated. According to the results, the optimum nanowire tunnel field effect transistor (MFMIS NW-TFET) properties are typically found in 20 nm long nanowires with a diameter of 15 nm and an equivalent oxide thickness of 3 nm. Because of its extremely low OFF-current and low power consumption, the MFMIS NW-TFET structure guarantees that the device can be used in low-power applications.