Impact of Material Variability on the Reliability of Nanosheet FETs

Gate-All-Around (GAA) Nanosheet Field-Effect Transistors (FETs) are replacing FinFETs due to the advancements in sub-5nm CMOS technology, which provide improved electrostatic control and scaling capabilities. The design and implementation of gate dielectrics are largely impacted by the increased integration issues brought about by the shift to sophisticated devices. In order to preserve gate capacitance while reducing leakage, high-k dielectrics exhibit intrinsic parameter fluctuations, such as dielectric constant, equivalent oxide thickness (EOT), interface trap densities, and fixed charges. The paper contains a direct comparison between Nanowire and single-layer Nanosheet FETs which represent primary GAA transistor designs for advanced logic applications. TCAD modeling allows market analysis of threshold voltage and subthreshold swing as well as drive current and leakage behavior. The superior electrostatic control comes from Nanowires but Nanosheets deliver more drive current in addition to design flexibility advantages. The research presents information that demonstrates the performance versus gate control trade-offs to help optimize future technological devices.