An Organic Approach towards Nano-Wire Tunnel FET

As the MOS based devices are in their declining phase due to their limitation of being scaled down, despite of several developments, Tunnel-FET (TFET) emerged as the best alternative due to its capability to get scale down without compromising the functionality. Although there are many TFET topologies, nano-wire TFET has recently gained attention because of their ability to achieve steep sub threshold slope and significantly minimize leakage current makes TFETs highly favorable for low power electronics. In nanowire-based designs, the use of band-to-band tunneling not only enhances gate control over the channel but also supports device scaling down to nanometer regimes. Recently, there has been growing interest in incorporating organic semiconductors into nanowire TFET structures, driven by their flexibility, compatibility with low-temperature fabrication, and adjustable band gap properties. As organic materials possess several advantages over Silicon, its use in the nano-wire TFET can create a huge impact.In this study an organic material is used as channel material in nano-wire TFET and simulated in Silvaco TCAD tool. DNTT is choosen as the organic material. The study shows the results as good as that of Silicon and far ahead of other peer organic materials