Reconfigurable Antenna based on Solution-Processed MoS₂ Memristors

Toward next-generation communication systems, the importance of high-frequency and low-power operating switches has significantly increased for controlling RF circuits [1–5]. Unlike conventional RF switches, devices based on the non-volatile resistive switching (NVRS) of 2D materials have gained attention for their high cutoff frequency ($f_{\mathrm{co}}=1 / 2 \pi R_{\mathrm{ON}} C_{\mathrm{OFF}}$) in the terahertz range origin from low $C_{\text {off }}$ and $R_{\text {on }}[4,6]$. Nevertheless, bottlenecks such as poor uniformity, low reliability, and lack of waferscale fabrication have impeded practical application. To overcome these limitations, we used solution-processed MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>, resulting in large-area fabrication, 600 cycles of endurance, and 25% of device-to-device (D2D) uniformity. Furthermore, using $\mathrm{Au} / \mathrm{Cu}$ electrodes for electrochemical metallization resulted in power-efficient switching in the sub-1 V region. Additionally, the solution-processed MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> RF switches are incorporated into the coplanar waveguide (CPW)-fed antenna to demonstrate frequency and pattern reconfigurability [7].