Impact of BaSi₂ HTL To Improve The Efficiency of ACZTSSe Solar Cell

To augment hole capture efficiency and curtail minority carrier recombination in photovoltaic (PV) cells, the selection of an appropriate hole transport layer (HTL) is paramount in CZTS/BaSi<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> PV architectures. Conventionally, CZTS cells have incorporated HTLs meticulously designed to suppress minority carrier losses. Recent advancements in PV technology underscore the significance of employing HTL materials with expansive energy bandgaps to enhance device performance. This study introduces an innovative wide-bandgap BaSi<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> nanomaterial as an HTL, tailored for high-efficiency PV applications. A comprehensive investigation is conducted, encompassing energy band alignment, the fine-tuning of layer thickness and doping profiles, and the structural refinement of the proposed PV configuration. The CZTS/BaSi<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> PV cell exhibits remarkable optoelectronic performance, attaining an V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</inf> of 945.6 mV, a J<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SC</inf> of 30.39 mA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, a FF of 84.83%, a power conversion efficiency of 24.38%, and quantum efficiency (QE) of 90%.