Nanolithographic Waveguides, Couplers and Ring Resonators made of Si<sub>3</sub>N<sub>4</sub> and AIN for Photonics and Quantum Technologies

Photonic integrated functionalities based on silicon nitride ($\mathrm{Si}_{3} \mathrm{~N}_{4}$) and aluminum nitride (AlN) fabricated and characterized on wafer level are presented here. The design comprises waveguides, couplers, and rings for C-band and L-band applications. Propagation losses of $0.25 \mathrm{~dB} / \mathrm{cm}$ for LPCVD-Si ${ }_{3} \mathrm{~N}_{4}, 0.6 \mathrm{~dB} / \mathrm{cm}$ for ICPCVD-Si3N4 and $1 \mathrm{~dB} / \mathrm{cm}$ for PECVD-Si N<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> were achieved. Wafer level characterization shows grating couplers with a measured maximum coupling coefficient in the range of -13.92 dB to -16.03 dB over the whole wafer. Moreover, ring resonances with quality factors higher than $19000\left(\mathrm{Si}_{3} \mathrm{~N}_{4}\right)$ and $3000(\mathrm{AlN})$ for $25 \mu \mathrm{~m}$ ring radius were achieved.

Authors

Institutions

Publication Details

Published
2025-04-08
DOI
https://doi.org/10.1109/ssi65953.2025.11107193
Citations
1
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
0.73

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Nanolithographic Waveguides, Couplers and Ring Resonators made of Si3N4 and AIN for Photonics and Quantum Technologies

Anne-Katrin Schumann, Karla Hiller, Roman Forke, Chris Stöckel et al.
1 citations
Photonic and Optical Devices
0.73
article

Nanolithographic Waveguides, Couplers and Ring Resonators made of Si3N4 and AIN for Photonics and Quantum Technologies

Anne-Katrin Schumann, Karla Hiller, Roman Forke, Chris Stöckel, Sebastian Schermer, Micha Haase, Danny Reuter, Alexey Shaporin, Julia Wecker, Christian Helke, Jörg Martin, Alexander Weiβ
article en
1 citations

Abstract

Photonic integrated functionalities based on silicon nitride ($\mathrm{Si}_{3} \mathrm{~N}_{4}$) and aluminum nitride (AlN) fabricated and characterized on wafer level are presented here. The design comprises waveguides, couplers, and rings for C-band and L-band applications. Propagation losses of $0.25 \mathrm{~dB} / \mathrm{cm}$ for LPCVD-Si ${ }_{3} \mathrm{~N}_{4}, 0.6 \mathrm{~dB} / \mathrm{cm}$ for ICPCVD-Si3N4 and $1 \mathrm{~dB} / \mathrm{cm}$ for PECVD-Si N<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> were achieved. Wafer level characterization shows grating couplers with a measured maximum coupling coefficient in the range of -13.92 dB to -16.03 dB over the whole wafer. Moreover, ring resonances with quality factors higher than $19000\left(\mathrm{Si}_{3} \mathrm{~N}_{4}\right)$ and $3000(\mathrm{AlN})$ for $25 \mu \mathrm{~m}$ ring radius were achieved.

Chemnitz University of Technology (DE), Fraunhofer Institute for Electronic Nano Systems (DE)
Ministry of Education
Openalex Percentile: Top 25%
Photonic and Optical Devices
0.73
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.