Characterization of MOS Channels Having AlSiO/AlN/GaN Gate Structures on m-plane and c-plane: Mobility, Threshold Voltage, and its Stability
A metal-oxide-semiconductor (MOS) gate structure has an advantage of the enough gate overdriving compared to the junction gate, which is an important point for high-power applications such as in-vehicle inverters. There are two major types in vertical GaN MOS field-effect transistors (MOSFETs); a trench-gate MOSFET having a m-plane channel and double-implanted MOSFET having a c-plane channel. Using AlSiO/AlN/GaN structure to enhance the channel mobility [1], this study fully compares both channel planes in terms of the channel mobility, the availability of E-mode operation, and the bias- and temperature-dependent threshold voltages ($V_{\mathrm{th}}$).
Authors
- Hiroko Iguchi (ORCID: https://orcid.org/0000-0003-2714-4111)
- Nobuyuki Ikarashi (ORCID: https://orcid.org/0000-0002-5575-5780)
- Masakazu Kanechika (ORCID: https://orcid.org/0000-0002-9761-8610)
- Emi Kano (ORCID: https://orcid.org/0000-0001-6134-4980)
- Tetsu Kachi (ORCID: https://orcid.org/0000-0002-4300-5720)
- Kazuyoshi Tomita (ORCID: https://orcid.org/0000-0002-7919-5116)
- Tetsuo Narita (ORCID: https://orcid.org/0000-0002-0849-360X)
- Shiro Iwasaki
- Jun Suda (ORCID: https://orcid.org/0000-0002-5453-4943)
- Daigo Kikuta (ORCID: https://orcid.org/0000-0001-9493-4143)
- Kenji Ito (ORCID: https://orcid.org/0000-0003-2175-7590)
Institutions
- Toyota Central Research and Development Laboratories (Japan) (JP)
- Nagoya University (JP)
Publication Details
- Published
- 2025-06-22
- DOI
- https://doi.org/10.1109/drc66027.2025.11105751
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00