Innovative BEOL Oxide-Based Devices as Key Enablers for High-Performing Heterogeneous Systems
For decades, Moore’s Law has driven semiconductor progress through relentless transistor scaling (Fig. 1). However, as silicon devices reach atomic dimensions, physical and economic barriers—such as power density, interconnect limitations, and escalating fabrication costs—slow traditional scaling [1]. At the same time, as shown in Fig. 2, AI’s rapid growth has exposed inefficiencies in conventional hardware, where memory access and data movement dominate power consumption, highlighting the need for new computing paradigms that minimize these bottlenecks [2]. To sustain innovation, the industry has shifted toward system-level scaling, where architectural advancements and heterogeneous integration (HI) play a central role [1, 2] (Fig.1).
Authors
- Folkert Horst (ORCID: https://orcid.org/0000-0001-6559-2076)
- Valeria Bragaglia (ORCID: https://orcid.org/0000-0003-0636-4211)
- Antonio La Porta (ORCID: https://orcid.org/0000-0003-3734-1354)
- B.J. Offrein
- Donato Francesco Falcone (ORCID: https://orcid.org/0009-0000-7474-7340)
- Mohan Ram (ORCID: https://orcid.org/0000-0001-6679-0146)
- Anne Fischer (ORCID: https://orcid.org/0000-0002-2106-3735)
- Wooseok Choi (ORCID: https://orcid.org/0000-0003-4064-4575)
- Vito Clericò (ORCID: https://orcid.org/0000-0001-6646-8309)
- Matteo Galetta (ORCID: https://orcid.org/0009-0008-5614-0228)
- Elisa Zaccaria
Institutions
- IBM Research - Zurich (CH)
Publication Details
- Published
- 2025-06-22
- DOI
- https://doi.org/10.1109/drc66027.2025.11105737
- Primary Topic
- Transition Metal Oxide Nanomaterials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- CHIST-ERA