Exploring Low Band Gap Source Materials for TFETs: An Extensive Analysis

TFETs have garnered significant attention as a viable alternative to traditional metal-oxide-semiconductor field-effect transistors because of their capacity to below 60 mV/decade subthreshold swing, which is essential for lesser power consumption usage. This paper provides an in-depth review of the latest advances TFET technology, emphasizing innovative design approaches, material developments, and performance improvements. We delve into the fundamental physics of band-to-band tunneling mechanisms that enable TFETs to function at reduced voltages, thereby lowering power consumption. Various TFET configurations, including planar and heterojunction designs, are examined for their influence on important performance metrics such as I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf>, I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</inf>, and threshold voltage. Additionally, we discuss the incorporation of materials like higher-k dielectrics to enhance TFET performance. In this review paper, we talk about the different design parameters, such as material other than conventional silicon for the device, the effect of higher-k dielectric materials, etc., on device performance-parameters.