HEMT-Based Memory: A New Paradigm for High-Speed and Reliable Data Storage
The evolution of memory technologies demands faster, more reliable, and energy-efficient devices. High Electron Mobility Transistor (HEMT)-based memory offers promising attributes such as ultra-fast switching, excellent radiation resistance, and high-temperature tolerance, making it suitable for next-generation electronics. This paper provides a comprehensive review of HEMT-based memory fundamentals, architecture, innovations, comparison with traditional memory technologies and potential applications.
Authors
- Tarun Chaudhary (ORCID: https://orcid.org/0000-0003-1854-4535)
- Yogesh Thakur (ORCID: https://orcid.org/0000-0002-4227-0418)
- Abhishek Kumar (ORCID: https://orcid.org/0000-0002-8523-3561)
- Balwinder Raj
- Abhishek Sharma
Institutions
- Dr. B. R. Ambedkar National Institute of Technology Jalandhar (IN)
Publication Details
- Published
- 2025-06-05
- DOI
- https://doi.org/10.1109/eaic66483.2025.11101308
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00