Interface-Driven Performance and Thermal Effects in Dual-Gated ITO Transistors

Amorphous oxide semiconductors like indium tin oxide (ITO) are promising for field-effect transistors (FETs) with high drive currents and low off-state currents [1–5], enabling back-end-of-line ($\leq 500^{\circ} \mathrm{C}$) [6] integration due to their ability to be deposited at low temperatures on a large scale [1–5, 7, 8]. However, fabricating nanoscale ITO transistors with dual gate control remains challenging, as the device performance is highly susceptible to the interfaces with the top-gate dielectric and the metal contacts [9]. While we have previously demonstrated dual-gated ITO transistors with high current [10], the physical mechanisms behind degradation at short ($\lt 100 \mathrm{~nm}$) channel lengths were not explored. Moreover, the thermal implications of high drive currents in oxide transistors also remain unknown. Here, we address these research gaps to provide physical insights and highlight key parameters for future designs.