Layer-dependent metamagnetic transitions in van der Waals antiferromagnet CrPS4

Understanding the magnetic transitions in van der Waals (vdW) magnets is crucial for their applications in future spintronic devices. While several vdW magnets such as CrI3 and MnBi2Te4 have been extensively studied, the spin reorientation process in CrPS4 under a magnetic field remains unclear. We report here the magnetic transitions of multilayer CrPS4 under both in-plane and out-of-plane magnetic fields as revealed by tunneling magnetoresistance (TMR) measurements. Theoretical calculations based on a linear-chain model combined with experimental data reveal a layer-dependent spin reorientation process. Accompanying the spin reorientation, anomalous kinks appear in the TMR curves, which could be attributed to the spin geometric phase induced interference effect. Our results shed critical light on the magnetic transitions of antiferromagnetic vdW materials, thereby advancing our mechanistic understanding of their behavior.

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Publication Details

Journal
Applied Physics Letters
Published
2025-08-11
DOI
https://doi.org/10.1063/5.0284710
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Layer-dependent metamagnetic transitions in van der Waals antiferromagnet CrPS4

Yinxin Bai, Chuanshou Wang, Changjian Li, Yihao Yang et al.
Applied Physics Letters
2D Materials and Applications
article

Layer-dependent metamagnetic transitions in van der Waals antiferromagnet CrPS4

Yinxin Bai, Chuanshou Wang, Changjian Li, Yihao Yang, Junjiang Tian, Yunlin Lei, Lang Chen, Junling Wang
article en

Abstract

Understanding the magnetic transitions in van der Waals (vdW) magnets is crucial for their applications in future spintronic devices. While several vdW magnets such as CrI3 and MnBi2Te4 have been extensively studied, the spin reorientation process in CrPS4 under a magnetic field remains unclear. We report here the magnetic transitions of multilayer CrPS4 under both in-plane and out-of-plane magnetic fields as revealed by tunneling magnetoresistance (TMR) measurements. Theoretical calculations based on a linear-chain model combined with experimental data reveal a layer-dependent spin reorientation process. Accompanying the spin reorientation, anomalous kinks appear in the TMR curves, which could be attributed to the spin geometric phase induced interference effect. Our results shed critical light on the magnetic transitions of antiferromagnetic vdW materials, thereby advancing our mechanistic understanding of their behavior.

Applied Physics LettersVol. 127(6)
City University of Hong Kong (HK), Dongguan University of Technology (CN), Southern University of Science and Technology (CN), Great Bay University
Natural Science Foundation for Young Scientists of Shanxi Province, National Key Research and Development Program of China, National Natural Science Foundation of China-Guangdong Joint Fund, Shenzhen Science and Technology Innovation Program
Openalex Percentile: Top 85%
2D Materials and Applications
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