Sliding ferroelectric properties and strain effects in GeC/SiC van der Waals heterostructures

Abstract Two-dimensional sliding ferroelectric materials have become a focal point of research in recent years due to their unique ferroelectric mechanisms. Expanding beyond single-layer systems, the development of two-dimensional heterostructures, known as heterostructure sliding ferroelectric materials, significantly broadens polarization modulation strategies and enhances overall functional performance. This work utilizes first-principles calculations to comprehensively explore the sliding ferroelectric properties of the GeC/SiC heterostructures. We explored the polarization reversal mechanism induced by interfacial sliding and examined the influence of strain on polarization behavior. Our findings indicate that polarization reversal occurs during the sliding process of the GeC/SiC heterostructures. Additionally, strain significantly modulates the polarization intensity: compressive strain reduces polarization, while tensile strain enhances it. These insights provide essential theoretical foundations and innovative design strategies for the development of novel two-dimensional ferroelectric materials and devices.