The rapid thermal annealing in hole transition layer amelioration for enhancing large-area perovskite solar cell <i>via</i> potential regulation and hole induction

The large-area Cs0.08FA0.92PbI3 solar cell (100 × 100 mm2) with NiO hole transport layers (HTLs) is prepared via the approach of rapid thermal annealing (RTA) auxiliary. The large-area Cs0.08FA0.92PbI3 photovoltaic device with NiO HTLs via RTA auxiliary exhibits high power conversion efficiency (PCE) of ∼18.42% and shows good stability in 800 h aging (remains ∼91.2% of initial value). In this structure, the NiO HTLs with Ni2+/Ni3+ mixed state is considered as the core issue. Because besides the crystal interfacial amelioration via RTA auxiliary, it obtains hole inducting/extracting and electron blocking by Fermi level regulation and charge compensation, which can heighten the carrier dynamic transport for achieving high PCE, as well as the smaller grains with lower photodegradation maintaining a good stability in long-term applications. This RTA technology would provide a promising candidate for future solar cell commercialization.