Angle-Resolved Antireflective Properties of Black Silicon
The article presents the results of experimental measurements and simulation of angle-resolved reflectance of black silicon (BS). It is established that BS demonstrates high antireflective properties at light incidence angles up to 60° in a wide range of the solar spectrum. This effect is attributed to the destructive interference of light waves at oblique incidence and their redirection closer to normal incidence within the material. The wide-angle stability of the power conversion efficiency of single-junction solar cells with a frontal BS antireflective surface is experimentally confirmed. The benefits of using BS as an interlayer for tandem perovskite/silicon solar cells are discussed in this aspect.
Authors
- Gagik Y. Ayvazyan (ORCID: https://orcid.org/0000-0001-9245-6758)
- Surik Khudaverdyan (ORCID: https://orcid.org/0009-0001-5999-3399)
- Ashok Vaseashta (ORCID: https://orcid.org/0000-0002-5649-0067)
- Laura Lakhoyan
Institutions
- National Polytechnic University of Armenia (AM)
- International Water Management Institute (IWMI) (LK)
Publication Details
- Published
- 2025-07-13
- DOI
- https://doi.org/10.1109/nano63165.2025.11113801
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ministry of Education and Science