Impact of Thickness Inhomogeneity on Transport Properties in CVD Grown MoS₂

The reliable integration of many electronic devices based on 2D materials is an open issue that faces the challenges related to the thickness inhomogeneity of the CVD grown material on large scale. We report on our experimental study of the correlation between the field-effect mobility of transistors based on semiconductive MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> and the material thickness inhomogeneity resulting from a standard chemical vapor deposition process. This opens a new perspective in different class of 2D materials based devices, where the monolayer thickness is a limitation to the device performance, such as catalytic cells and optoelectronic detectors.