Machine Learning Assisted Compact Modeling of Dynamic Switching and Transient Response in Ferroelectric Capacitor

This work introduces a machine learning-assisted compact model of a ferroelectric capacitor (FeCap), leveraging a time-dependent recurrent neural network (RNN)-based methodology. This RNN-based compact model captures the dynamic switching and transient response of FeCap. The switching behavior of a metal-ferroelectric-metal (MFM) capacitor is validated experimentally for varying voltage ramp rates and amplitudes. A Verilog-A simulation workflow is implemented to demonstrate the compatibility of this model with SPICE circuit simulators. This simulation workflow is applied to a metal-ferroelectric-insulator-semiconductor (MFIS) capacitor in ferroelectric field-effect-transistor (FeFET) technology in a 28 nm foundry platform, highlighting the versatility of the RNN-based model.

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Publication Details

Published
2025-07-13
DOI
https://doi.org/10.1109/nano63165.2025.11113805
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
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article

Machine Learning Assisted Compact Modeling of Dynamic Switching and Transient Response in Ferroelectric Capacitor

Omkar Phadke, Chinsung Park, Asif Islam Khan, Shimeng Yu et al.
Ferroelectric and Negative Capacitance Devices
article

Machine Learning Assisted Compact Modeling of Dynamic Switching and Transient Response in Ferroelectric Capacitor

Omkar Phadke, Chinsung Park, Asif Islam Khan, Shimeng Yu, Janak Sharda, Jay Sonawane
article en

Abstract

This work introduces a machine learning-assisted compact model of a ferroelectric capacitor (FeCap), leveraging a time-dependent recurrent neural network (RNN)-based methodology. This RNN-based compact model captures the dynamic switching and transient response of FeCap. The switching behavior of a metal-ferroelectric-metal (MFM) capacitor is validated experimentally for varying voltage ramp rates and amplitudes. A Verilog-A simulation workflow is implemented to demonstrate the compatibility of this model with SPICE circuit simulators. This simulation workflow is applied to a metal-ferroelectric-insulator-semiconductor (MFIS) capacitor in ferroelectric field-effect-transistor (FeFET) technology in a 28 nm foundry platform, highlighting the versatility of the RNN-based model.

Georgia Institute of Technology (US)
Affordable and clean energy
Openalex Percentile: Top 81%
Ferroelectric and Negative Capacitance Devices
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