Planar Strained-Layer Superlattice Based Infrared Photodetectors Using Diffusion Technique

Strained layer superlattice (SLS) material system has enabled a quantum mechanical based devices to leverage nanoelectronics into the infrared photodetection. Unique band structure engineering capability along with diversity exists in III-V material has offered viable alternatives towards achieving high performance long- wavelength and mid-wavelength infrared photodetectors for military and commercial applications. In this work, we present recent progress on planar InAs/InAs1-xSbx SLS photodetectors using diffusion technique. Mid-wavelength infrared Zn -diffused planar photodetectors were processed and grown by metal-organic chemical vapor deposition and molecular-beam epitaxy system. The electrical and optical performance of the mid-wavelength devices are reported and the compared.