Achieving Exceptional Electron Mobility in Amorphous In<sub>2</sub>O<sub>3</sub>:Sn Films Through Nitrogen-Mediated Room-Temperature Processing
We have developed a novel fabrication method for amorphous <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{In}_{2} \mathrm{O}_{3}: \text{Sn}$</tex> (a-ITO) films called nitrogen-mediated amorphization (NMA), which involves introducing <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{N}_{\mathbf{2}}$</tex> gas into the sputtering deposition atmosphere. Using the NMA method, we successfully fabricated a-ITO films with a high electron mobility of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{5 0} \mathbf{c m}^{2} / \mathbf{V s}$</tex> even at room temperature. Moreover, the NMA method significantly enhances the spatial uniformity of the electrical properties of a-ITO films. These results demonstrate that the NMA method holds great promise for producing high-quality a-ITO films on flexible and large-area substrates.
Authors
- Naho Itagaki (ORCID: https://orcid.org/0000-0003-1323-8774)
- Masaharu Shiratani (ORCID: https://orcid.org/0000-0002-4103-3939)
- Seiichi Hata (ORCID: https://orcid.org/0000-0001-6772-1919)
- Kazunori Koga (ORCID: https://orcid.org/0000-0002-9214-7493)
- Kouki Imoto
- H J Wang (ORCID: https://orcid.org/0009-0000-0535-034X)
Institutions
- Kyushu University (JP)
Publication Details
- Published
- 2025-07-13
- DOI
- https://doi.org/10.1109/nano63165.2025.11113510
- Primary Topic
- ZnO doping and properties
- Type
- article
- Field-Weighted Citation Impact
- 0.00