Design of 2-6 GHz Wideband 100W GaN Power Amplifier

A <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2-6 \text{GHz}$</tex> internally matched power amplifier based on the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.25 {\mu} \mathrm{m}$</tex> gate-length GaN HEMT process has been developed. To address broadband impedance matching challenges, the matching network employs a low-pass LC structure and a multi-order impedance transformation design, and the input matching network uses a lossy matching structure to enhance amplifier stability. Under continuous wave operating conditions, the amplifier achieves a power gain of over 8 dB, an output power exceeding 50 dBm, and a drain efficiency greater than 50% across the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2-6 \text{GHz}$</tex> frequency range.