Enhanced SiC Trench Mosfet Performance Through Ferroelectric Gating and Current Spreading Layer Integration
SiC MOSFETs are transforming high-power applications with superior efficiency and compactness. Despite challenges, strategies like double trench MOSFETs and hafnium oxide are enhancing their reliability and performance. Here we present an enhanced SiC trench MOSFET incorporates a ferroelectric gate and a current spreading layer. The integration of ferroelectric HfZrO optimizes the electric field distribution, significantly improving the trade-off between breakdown voltage and specific on-resistance. The device exhibits 5.3% increase in breakdown voltage and 7.1% decrease in specific on-resistance, which leads 19.4% improvement in Figure of Merit compared to conventional SiC MOSFETs, paving the way for efficiency enhancements in high-power equipment.
Authors
- Shan Le Cai
- Wen Huang (ORCID: https://orcid.org/0000-0002-4778-9817)
- Junxiong Guo (ORCID: https://orcid.org/0000-0002-0071-1086)
- Run Mao (ORCID: https://orcid.org/0009-0005-3351-6438)
- Xiang Wang (ORCID: https://orcid.org/0009-0005-8461-9082)
- Yu Liu (ORCID: https://orcid.org/0009-0000-8965-5529)
Institutions
- University of Electronic Science and Technology of China (CN)
- Chengdu University of Information Technology (CN)
- Nanjing University of Posts and Telecommunications (CN)
- Chengdu Institute of Information Technology (China) (CN)
- Chengdu University (CN)
- Institute for Advanced Study (DE)
- Chengdu Tool Research Institute (China) (CN)
- China National Petroleum Corporation (China) (CN)
Publication Details
- Published
- 2025-05-17
- DOI
- https://doi.org/10.1109/icet64964.2025.11102980
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00