Thickness-Dependent and Scalability Study of Cadmium Trithiphosphate at Cryogenic Temperature for Advanced Electronic Applications

Cadmium trithiophosphate <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\left(\text{CdPS}_{3}\right)$</tex> is a layered transition metal dichalcogenide (LTMD) with notable ferroelectric and magnetic properties, making it ideal for multifunctional device applications. This study examines the dielectric properties of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{CdPS}_{3}$</tex> in a Metal-Insulator-Metal (MIM) structure, focusing on capacitance as a function of thickness and frequency. Capacitance and breakdown voltage were measured using LCR meters and Cryocore systems, with frequencies ranging from 50 to 150 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{k H z}$</tex>. Results revealed dielectric constants averaging <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{9. 8}$</tex> for <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$40-44 \text{nm}$</tex> thickness and 8.5 for <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$115-119 \text{nm}$</tex>, with consistent performance. The breakdown voltage was evaluated up to 200 V, and the current-voltage (IV) characteristics were analyzed. These findings underscore <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{CdPS}_{3}$</tex> 's potential as a high-к dielectric material for sensors, energy storage, quantum devices, etc.