Empirical Tight Binding Modeling of InAs/InAs<sub>1-x</sub>Sb<sub>x</sub> Ternary-Based Strain-Balanced Superlattices

We report quantum mechanical based band structure modeling of ternary- strain-balanced superlattice. A modified sp3s* empirical tight binding method along with virtual crystal approximation were used to model the ternary InAs/InAs<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf>Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> strain-balanced superlattice and generate fitting parameters for the empirical tight-binding method. The simulation results show agreement with bandgaps extracted from experimental results for the ternary-based strain-balanced superlattices. Superlattice design and simulated band structure around the Γ-point was extracted to confirm the flexibility of material system and the efficiency of empirical tight binding method.

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Published
2025-07-13
DOI
https://doi.org/10.1109/nano63165.2025.11113673
Primary Topic
Advanced Semiconductor Detectors and Materials
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article
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article

Empirical Tight Binding Modeling of InAs/InAs1-xSbx Ternary-Based Strain-Balanced Superlattices

Arash Dehzangi, Jiakai Li
Advanced Semiconductor Detectors and Materials
article

Empirical Tight Binding Modeling of InAs/InAs1-xSbx Ternary-Based Strain-Balanced Superlattices

Arash Dehzangi, Jiakai Li
article en

Abstract

We report quantum mechanical based band structure modeling of ternary- strain-balanced superlattice. A modified sp3s* empirical tight binding method along with virtual crystal approximation were used to model the ternary InAs/InAs<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf>Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> strain-balanced superlattice and generate fitting parameters for the empirical tight-binding method. The simulation results show agreement with bandgaps extracted from experimental results for the ternary-based strain-balanced superlattices. Superlattice design and simulated band structure around the Γ-point was extracted to confirm the flexibility of material system and the efficiency of empirical tight binding method.

The University of Texas at Dallas (US), Applied Optoelectronics (United States) (US)
Openalex Percentile: Top 81%
Advanced Semiconductor Detectors and Materials
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Empirical Tight Binding Modeling of InAs/InAs<sub>1-x</sub>Sb<sub>x</sub> Ternary-Based Strain-Balanced Superlattices — Arash Dehzangi, Jiakai Li · (2025) | TGRS Research Map | TGRS