Empirical Tight Binding Modeling of InAs/InAs<sub>1-x</sub>Sb<sub>x</sub> Ternary-Based Strain-Balanced Superlattices
We report quantum mechanical based band structure modeling of ternary- strain-balanced superlattice. A modified sp3s* empirical tight binding method along with virtual crystal approximation were used to model the ternary InAs/InAs<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf>Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> strain-balanced superlattice and generate fitting parameters for the empirical tight-binding method. The simulation results show agreement with bandgaps extracted from experimental results for the ternary-based strain-balanced superlattices. Superlattice design and simulated band structure around the Γ-point was extracted to confirm the flexibility of material system and the efficiency of empirical tight binding method.
Authors
- Arash Dehzangi (ORCID: https://orcid.org/0000-0001-5043-2678)
- Jiakai Li (ORCID: https://orcid.org/0000-0002-3948-4319)
Institutions
- The University of Texas at Dallas (US)
- Applied Optoelectronics (United States) (US)
Publication Details
- Published
- 2025-07-13
- DOI
- https://doi.org/10.1109/nano63165.2025.11113673
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00