Strain-Regulated Polarity Switching in Flexible MoTe₂ Transistors

Molybdenum ditelluride (MoTe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>), a recently emerging two-dimensional transition metal dichalcogenide (TMDC), has demonstrated excellent electrical properties for next-generation flexible electronics. However, its devices still suffer from limited carrier mobility and ineffective modulation of ambipolar transport behavior. Herein, this work represents a flexible locally buried-gated MoTe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> transistors that feature hole and electron mobilities up to 24.63 and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$13.51 \text{cm}^{2} / \mathrm{V} \cdot \mathrm{s}$</tex>, respectively. In addition, we demonstrate the strain-induced polarity transition via customized platforms, resulting from strain-dependent band structure in 2D MoTe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>. Our work exhibits the potential of MoTe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> for future flexible integrated CMOS circuits.