A 2-18 GHz Wideband GaAs IPD Gain Equalizer with Ultra-Low Reflection Characteristics
By introducing a T-shaped resistive-inductive-capacitive (RLC) hybrid topology, this article presents a 850 μm × 850 μm wideband gain equalizer using GaAs integrated passive device (IPD) technology, featuring ultra-low reflection and positive linear gain slope characteristics over 2-18 GHz. Designed to compensate for frequency-dependent gain variations in modern communication systems, the equalizer achieves excellent impedance matching across the entire band without external attenuators or isolators. Experimental results show >6.9 dB gain slope compensation, input/output voltage standing wave ratio (VSWR) better than 1.22:1, and gain slope linearity within ±1.3 dB over 85% of the desired frequency band, with good agreement to simulated results. This study establishes a new paradigm for high-performance equalizer design, particularly suitable for 5G/6G base stations and phased-array systems demanding stringent gain flatness and compact integration.
Authors
- Jianjun Ding (ORCID: https://orcid.org/0000-0002-7597-2141)
- Yan Ding (ORCID: https://orcid.org/0000-0002-3330-3425)
- Xing Fan
- Zhen Yu (ORCID: https://orcid.org/0000-0001-8492-1859)
Institutions
- North China Institute of Aerospace Engineering (CN)
- National Astronomical Observatories (CN)
Publication Details
- Published
- 2025-05-23
- DOI
- https://doi.org/10.1109/ecis65594.2025.11086949
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Fundamental Research Funds for the Central Universities