New Solution for the Extraction of Interfacial Thermal Resistance in Semiconductors

Thermal transient testing is widely used in thermal resistance measurement of electronic devices and modules. The traditional method is difficult to extract the thermal resistance of materials with low thermal capacity and high thermal resistance in some complex electronic devices and modules. This paper introduces an improved algorithm, which can extract the thermal time constant of a specific layer by removing the influence of the thermal time constant of the previous layer. The accuracy of the results is verified by reconstruction of the transient response curve and comparison with the original curve. Experiments show that this method is effective for extracting the thermal resistance of thin layer material in semiconductors.