Analytical Model for Ballistic 2D Nanotransistors

This paper describes device models for the current-voltage (I–V) and capacitance-voltage (C–V) characteristics of ballistic nanotransistors based on two-dimensional (2D) materials. The proposed methodology introduces a novel, fully analytical, and explicit approach grounded in fundamental physical principles. This approach enables seamless integration into circuit simulators and provides clear insight into device operation. In contrast to the drift-diffusion models commonly found in the literature, this approach accurately describes the ballistic transport regime observed in state-of-the-art 2D nanotransistors. The proposed model was validated against both experimental and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ab initio</i> numerical simulations from the literature for devices based on molybdenum disulfide (MoS<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>) and indium selenide (InSe). The results show excellent agreement with the reference datasets, confirming the model’s accuracy and its suitability for designing advanced nanoelectronic devices and circuits.