Synthesis of Photodetectors Based on CdS Nanostructures by SILAR Method without Using Ammonia as a Catalyst

In this paper, photodetectors based on CdS thin films were successfully prepared and deposited on glass substrates using the SILAR method without using ammonia as a catalyst and with the presence of ammonia. The previously mentioned samples were named as Z3 and Z4, respectively. The structural, morphological, and optical properties were studied. XRD data revealed a crystal phase and a cubic structure of CdS with peaks corresponding to planes (111), (022), and (131). Also, the measured crystal size of plane (111) was 20.506 and 54.661 nm for samples Z3 and Z4 respectively. FESEM images showed homogenous nanosized grains for prepared samples. The absorption spectra and energy band gap of CdS were measured with UV-Vis spectroscopy, which showed that for sample Z3 and for sample Z4 and both were seen to be tended toward redshift. The (I-V) properties of Z3 and Z4 photodetectors revealed a weak response under visible light, but a much higher response to UV light. At 5V bias, the photocurrent was increased from to for Z3, while increased from to for Z4. Photosensitivity investigation demonstrated that Z4 had a higher response than Z3. The rise time of samples Z3 and Z4 were 3.4 and 3.21 , respectively, while the decay time for Z3 was 3.2 and for Z4 was 3.2 . DOI: In this paper, photodetectors based on CdS thin films were successfully prepared and deposited on glass substrates using the SILAR method without using ammonia as a catalyst and with the presence of ammonia. The previously mentioned samples were named as Z3 and Z4, respectively. The structural, morphological, and optical properties were studied. XRD data revealed a crystal phase and a cubic structure of CdS with peaks corresponding to planes (111), (022), and (131). Also, the measured crystal size of plane (111) was 20.506 and 54.661 nm for samples Z3 and Z4 respectively. FESEM images showed homogenous nanosized grains for prepared samples. The absorption spectra and energy band gap of CdS were measured with UV-Vis spectroscopy, which showed that for sample Z3 and for sample Z4 and both were seen to be tended toward redshift. The (I-V) properties of Z3 and Z4 photodetectors revealed a weak response under visible light, but a much higher response to UV light. At 5V bias, the photocurrent was increased from to for Z3, while increased from to for Z4. Photosensitivity investigation demonstrated that Z4 had a higher response than Z3. The rise time of samples Z3 and Z4 were 3.4 and 3.21 , respectively, while the decay time for Z3 was 3.2 and for Z4 was 3.2 .

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Publication Details

Journal
Journal of Kufa Physics
Published
2025-06-29
DOI
https://doi.org/10.31257/2018/jkp/2024/v16.i02.16321
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Synthesis of Photodetectors Based on CdS Nanostructures by SILAR Method without Using Ammonia as a Catalyst

Hussein Abdullah Alshamarti, Zainal Salam
Journal of Kufa Physics
Chalcogenide Semiconductor Thin Films
article

Synthesis of Photodetectors Based on CdS Nanostructures by SILAR Method without Using Ammonia as a Catalyst

Hussein Abdullah Alshamarti, Zainal Salam
article en

Abstract

In this paper, photodetectors based on CdS thin films were successfully prepared and deposited on glass substrates using the SILAR method without using ammonia as a catalyst and with the presence of ammonia. The previously mentioned samples were named as Z3 and Z4, respectively. The structural, morphological, and optical properties were studied. XRD data revealed a crystal phase and a cubic structure of CdS with peaks corresponding to planes (111), (022), and (131). Also, the measured crystal size of plane (111) was 20.506 and 54.661 nm for samples Z3 and Z4 respectively. FESEM images showed homogenous nanosized grains for prepared samples. The absorption spectra and energy band gap of CdS were measured with UV-Vis spectroscopy, which showed that for sample Z3 and for sample Z4 and both were seen to be tended toward redshift. The (I-V) properties of Z3 and Z4 photodetectors revealed a weak response under visible light, but a much higher response to UV light. At 5V bias, the photocurrent was increased from to for Z3, while increased from to for Z4. Photosensitivity investigation demonstrated that Z4 had a higher response than Z3. The rise time of samples Z3 and Z4 were 3.4 and 3.21 , respectively, while the decay time for Z3 was 3.2 and for Z4 was 3.2 . DOI: In this paper, photodetectors based on CdS thin films were successfully prepared and deposited on glass substrates using the SILAR method without using ammonia as a catalyst and with the presence of ammonia. The previously mentioned samples were named as Z3 and Z4, respectively. The structural, morphological, and optical properties were studied. XRD data revealed a crystal phase and a cubic structure of CdS with peaks corresponding to planes (111), (022), and (131). Also, the measured crystal size of plane (111) was 20.506 and 54.661 nm for samples Z3 and Z4 respectively. FESEM images showed homogenous nanosized grains for prepared samples. The absorption spectra and energy band gap of CdS were measured with UV-Vis spectroscopy, which showed that for sample Z3 and for sample Z4 and both were seen to be tended toward redshift. The (I-V) properties of Z3 and Z4 photodetectors revealed a weak response under visible light, but a much higher response to UV light. At 5V bias, the photocurrent was increased from to for Z3, while increased from to for Z4. Photosensitivity investigation demonstrated that Z4 had a higher response than Z3. The rise time of samples Z3 and Z4 were 3.4 and 3.21 , respectively, while the decay time for Z3 was 3.2 and for Z4 was 3.2 .

Journal of Kufa PhysicsVol. 16(02)
University of Kufa (IQ)
Openalex Percentile: Top 81%
Chalcogenide Semiconductor Thin Films
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