An Improved SiC MOSFET With Integrated Schottky Contact Super Barrier Rectifier

This study focuses on the SiC MOSFET with integrated Schottky contact super barrier rectifier (SiC SSBR-MOSFET) through the application of TCAD simulation methodologies. During its operation as a freewheeling diode, the parasitic bipolar body diode’s activity is effectively suppressed as the SSBR has a lower turn-on voltage. Thus, the problem of bipolar degradation is entirely mitigated. Furthermore, the SiC SSBR-MOSFET demonstrates outstanding dynamic performance. In contrast to the conventional SiC MOSFET (SiC C-MOSFET), it exhibits decrease in input capacitance (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$C_{\mathrm {ISS}}$ </tex-math></inline-formula>), reverse transfer capacitance (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$C_{\mathrm {RSS}}$ </tex-math></inline-formula>), gate charge (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Q_{\mathrm {G}}$ </tex-math></inline-formula>) and gate-to-drain charge (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Q_{\mathrm {GD}}$ </tex-math></inline-formula>) by approximately 2, 6, 2 and 12 times, respectively. Despite a slight increase in specific on-resistance (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$R_{\mathrm {ON\cdot SP}}$ </tex-math></inline-formula>), the SiC SSBR-MOSFET’s figures of merit, including <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$R_{\mathrm {ON\cdot SP}}\times Q_{\mathrm {G}}$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$R_{\mathrm {ON\cdot SP}}\times Q_{\mathrm {GD}}$ </tex-math></inline-formula>, are significantly enhanced, reducing by 1.8 and 11 times, respectively. The SiC SSBR-MOSFET’s exceptional performance and straightforward implementation render it highly appealing for advanced power electronics applications.