Residual stress and deformation analysis considering adhesive material properties to enhance manufacturing of HBM
Residual stress and deformation in dies and wafers pose significant challenges in high-bandwidth memory (HBM) manufacturing. Precise die alignment is critical for multi-stacked dies in HBM packages, which utilize ultra-fine pitch interconnections. The adhesive used in the HBM process plays a crucial role in securing HBM dies to the carrier wafer during stacking. Therefore, the adhesive must maintain strong adhesion to prevent delamination while minimizing warpage during fabrication. This research investigates how adhesive material properties influence adhesion performance and warpage in HBM structures. Finite element analysis was used to conduct heat transfer and structural simulations. A sequential die-stacking method, employing the ‘Birth and Death’ function, simulated the actual HBM manufacturing process. Simulations show that residual stress increases with the number of stacked dies. In addition, adhesives with higher Young's modulus increase residual stress but significantly reduce warpage and logic die deformation. These findings highlight the need to optimize adhesive properties to enhance manufacturing yield and mechanical reliability in HBM packages, providing valuable insights for advanced semiconductor packaging, especially heterogeneous integration .
Authors
- Sun Choi (ORCID: https://orcid.org/0000-0002-8261-9186)
- Junjun Song
- Young-Hun Kim
- Jun Young Oh (ORCID: https://orcid.org/0000-0003-3018-8246)
- Young Hee Kim (ORCID: https://orcid.org/0000-0003-1362-8756)
- Jae-Jin Jeon (ORCID: https://orcid.org/0000-0001-7747-1722)
- Sang Won Yoon (ORCID: https://orcid.org/0000-0002-0201-8031)
- Seok Hwan Lee
Institutions
- Seoul National University (KR)
- Samsung (South Korea) (KR)
Publication Details
- Journal
- Journal of Materials Research and Technology
- Published
- 2025-08-09
- DOI
- https://doi.org/10.1016/j.jmrt.2025.08.059
- Primary Topic
- Advanced Surface Polishing Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00