Preparation and Electrochemical Performance of N-Doped H<sub>x</sub>V<sub>2</sub>O<sub>5</sub>/CeVO<sub>4</sub> Composite Films as Stable Cathodes for Aqueous Zinc-Ion Batteries

Aqueous zinc-ion batteries (AZIBs) have attracted considerable attention due to their low cost, high safety, and environmental friendliness, however, the structural problems triggered by the repeated insertion and extraction of Zn<sup>2+</sup> in vanadium-based cathode materials remain a key challenge restricting their development. In this work, N-doped H<sub>x</sub>V<sub>2</sub>O<sub>5</sub>/CeVO<sub>4</sub> composite films were successfully prepared on indium-tin-oxide (ITO) conductive glass by low-temperature liquid-phase deposition combined with an annealing process. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and Raman spectroscopy were employed to systematically characterize the differences in crystal structure, morphological evolution, and microscopic properties of the thin-film electrodes at various annealing temperatures. In order to inhibit the dissolution of the electrode during the reaction process, paperboard was introduced as a physical barrier layer in the electrochemical tests, and the galvanostatic charge/discharge (GCD) test results showed that the paperboard system could effectively improve the cycling stability. Among them, the composite film annealed at 450 °C showed the best performance: 83.9% (223.94 mA h m<sup>-2</sup>) capacity retention after 100 cycles at 100 mA m<sup>-2</sup> current density, significantly better than that of the 500 °C sample. XRD and XPS analyses show that the tunnel structure of H<sub>x</sub>V<sub>2</sub>O<sub>5</sub> provides high-capacity storage sites. At the same time, the tetragonal zirconium skeleton of CeVO<sub>4</sub> synergistically enhances the stability of the material by suppressing the structural collapse caused by Zn<sup>2+</sup> insertion/extraction. Nitrogen doping further enlarges the H<sub>x</sub>V<sub>2</sub>O<sub>5</sub> lattice spacing ((200) crystallite spacing increased from the standard 0.576 to 0.607 nm), optimizing the ion diffusion kinetics. This study provides a path for developing highly stable vanadium-based composite electrodes through a synergistic strategy of atomic doping and composite structure design.

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Publication Details

Journal
Langmuir
Published
2025-08-15
DOI
https://doi.org/10.1021/acs.langmuir.5c02822
Citations
3
Primary Topic
Advanced battery technologies research
Type
article
Field-Weighted Citation Impact
2.19

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article

Preparation and Electrochemical Performance of N-Doped HxV2O5/CeVO4 Composite Films as Stable Cathodes for Aqueous Zinc-Ion Batteries

Qi Ge, Qiang Zhao, Daosheng Sun, Hanxiao Bian et al.
3 citations
Langmuir
Advanced battery technologies research
2.19
article

Preparation and Electrochemical Performance of N-Doped HxV2O5/CeVO4 Composite Films as Stable Cathodes for Aqueous Zinc-Ion Batteries

Qi Ge, Qiang Zhao, Daosheng Sun, Hanxiao Bian, Dongcai Li, Haiyan Xu, Aiguo Wang
article en
3 citations

Abstract

Aqueous zinc-ion batteries (AZIBs) have attracted considerable attention due to their low cost, high safety, and environmental friendliness, however, the structural problems triggered by the repeated insertion and extraction of Zn<sup>2+</sup> in vanadium-based cathode materials remain a key challenge restricting their development. In this work, N-doped H<sub>x</sub>V<sub>2</sub>O<sub>5</sub>/CeVO<sub>4</sub> composite films were successfully prepared on indium-tin-oxide (ITO) conductive glass by low-temperature liquid-phase deposition combined with an annealing process. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and Raman spectroscopy were employed to systematically characterize the differences in crystal structure, morphological evolution, and microscopic properties of the thin-film electrodes at various annealing temperatures. In order to inhibit the dissolution of the electrode during the reaction process, paperboard was introduced as a physical barrier layer in the electrochemical tests, and the galvanostatic charge/discharge (GCD) test results showed that the paperboard system could effectively improve the cycling stability. Among them, the composite film annealed at 450 °C showed the best performance: 83.9% (223.94 mA h m<sup>-2</sup>) capacity retention after 100 cycles at 100 mA m<sup>-2</sup> current density, significantly better than that of the 500 °C sample. XRD and XPS analyses show that the tunnel structure of H<sub>x</sub>V<sub>2</sub>O<sub>5</sub> provides high-capacity storage sites. At the same time, the tetragonal zirconium skeleton of CeVO<sub>4</sub> synergistically enhances the stability of the material by suppressing the structural collapse caused by Zn<sup>2+</sup> insertion/extraction. Nitrogen doping further enlarges the H<sub>x</sub>V<sub>2</sub>O<sub>5</sub> lattice spacing ((200) crystallite spacing increased from the standard 0.576 to 0.607 nm), optimizing the ion diffusion kinetics. This study provides a path for developing highly stable vanadium-based composite electrodes through a synergistic strategy of atomic doping and composite structure design.

LangmuirVol. 41(33)
Anhui Jianzhu University (CN), Anhui University (CN)
National Key Research and Development Program of China
Openalex Percentile: Top 11%
Advanced battery technologies research
2.19
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