Two-Dimensional Electron Gases Formed in Strain-Engineered Ferroelectric SrTiO<sub>3</sub> Thin Films

Two-dimensional electron gases (2DEGs) in quantum paraelectric SrTiO<sub>3</sub> (STO) exhibit high electron mobilities at low temperature, superconductivity, and efficient spin-charge interconversion owing to their Rashba spin-orbit coupling. However, such 2DEGs have almost exclusively been generated in STO single crystals, and few attempts to replace crystals by heteroepitaxial STO films have mostly resulted in low mobilities, limiting device integration and functional tuning such as strain-induced ferroelectricity. Here, we use hybrid oxide molecular beam epitaxy to grow high-quality strain-engineered STO films that are ferroelectric up to 165 K. By sputtering thin aluminum layers at room temperature, we generate a 2DEG at their surface. Raman spectroscopy and magnetotransport measurements indicate that the ferroelectric character is retained after 2DEG formation. These results suggest that our samples behave as ferroelectric 2DEGs up to temperatures well above previous results based on Ca-STO substrates (∼30 K), opening the way toward thin-film-based ferroelectric 2DEGs operating at room temperature.

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Publication Details

Journal
Nano Letters
Published
2025-08-14
DOI
https://doi.org/10.1021/acs.nanolett.5c02127
Primary Topic
Electronic and Structural Properties of Oxides
Type
article
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article

Two-Dimensional Electron Gases Formed in Strain-Engineered Ferroelectric SrTiO3 Thin Films

Luis M. Vicente‐Arche, M. Cazayous, Ruchi Tomar, Aravind Raji et al.
1 links
Nano Letters
Electronic and Structural Properties of Oxides
article

Two-Dimensional Electron Gases Formed in Strain-Engineered Ferroelectric SrTiO3 Thin Films

Luis M. Vicente‐Arche, M. Cazayous, Ruchi Tomar, Aravind Raji, L. Vila, Alexandre Gloter, Manuel Bibès, Roman Engel‐Herbert, Fernando Gallego, Tatiana Kuznetsova, Srijani Mallik, Jean-Philippe Attané
article en

Abstract

Two-dimensional electron gases (2DEGs) in quantum paraelectric SrTiO<sub>3</sub> (STO) exhibit high electron mobilities at low temperature, superconductivity, and efficient spin-charge interconversion owing to their Rashba spin-orbit coupling. However, such 2DEGs have almost exclusively been generated in STO single crystals, and few attempts to replace crystals by heteroepitaxial STO films have mostly resulted in low mobilities, limiting device integration and functional tuning such as strain-induced ferroelectricity. Here, we use hybrid oxide molecular beam epitaxy to grow high-quality strain-engineered STO films that are ferroelectric up to 165 K. By sputtering thin aluminum layers at room temperature, we generate a 2DEG at their surface. Raman spectroscopy and magnetotransport measurements indicate that the ferroelectric character is retained after 2DEG formation. These results suggest that our samples behave as ferroelectric 2DEGs up to temperatures well above previous results based on Ca-STO substrates (∼30 K), opening the way toward thin-film-based ferroelectric 2DEGs operating at room temperature.

Nano LettersVol. 25(34)
Centre National de la Recherche Scientifique (FR), Pennsylvania State University (US), Saha Institute of Nuclear Physics (IN), Homi Bhabha National Institute (IN), Université Paris Cité (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Université Paris-Saclay (FR), Laboratoire de physique des Solides (FR), Synchrotron soleil (FR), CEA Grenoble (FR), Paul Drude Institute for Solid State Electronics (DE), Laboratoire Matériaux et Phénomènes Quantiques (FR), Spintronique et Technologie des Composants (FR), Thales (France) (FR), Forschungsverbund Berlin (DE), Institut des langues et cultures d'Europe, Amérique, Afrique, Asie et Australie (FR), Université Grenoble Alpes (FR)
Openalex Percentile: Top 85%
Electronic and Structural Properties of Oxides
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