Single Metal Atom Catalysts Prepared by Diluted Atomic Layer Deposition

The scalable and facile preparation of single-atom catalysts remains a critical challenge. Here, we introduce diluted atomic layer deposition (DALD), a unique approach for synthesizing supported metal catalysts with precisely tunable loadings. Unlike conventional metal deposition by ALD which uses pure metal precursors, DALD employs a diluted precursor mixture, combining organometallic precursors with the corresponding free ligand in controlled ratios. The method enables precise control over metal loadings, allowing the synthesis of structures ranging from nanoparticles to isolated single atoms, as exemplified by Ir, Rh, and Pt on high-surface-area γ-Al<sub>2</sub>O<sub>3</sub>. With its inherent simplicity and exceptional efficiency in metal precursor utilization, DALD represents a highly scalable strategy, unlocking opportunities for integrating single-atom catalysts into industrial processes.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-08-15
DOI
https://doi.org/10.1021/acsami.5c10576
Citations
5
Primary Topic
Catalytic Processes in Materials Science
Type
article
Field-Weighted Citation Impact
2.59

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Single Metal Atom Catalysts Prepared by Diluted Atomic Layer Deposition

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Single Metal Atom Catalysts Prepared by Diluted Atomic Layer Deposition

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article en
5 citations

Abstract

The scalable and facile preparation of single-atom catalysts remains a critical challenge. Here, we introduce diluted atomic layer deposition (DALD), a unique approach for synthesizing supported metal catalysts with precisely tunable loadings. Unlike conventional metal deposition by ALD which uses pure metal precursors, DALD employs a diluted precursor mixture, combining organometallic precursors with the corresponding free ligand in controlled ratios. The method enables precise control over metal loadings, allowing the synthesis of structures ranging from nanoparticles to isolated single atoms, as exemplified by Ir, Rh, and Pt on high-surface-area γ-Al<sub>2</sub>O<sub>3</sub>. With its inherent simplicity and exceptional efficiency in metal precursor utilization, DALD represents a highly scalable strategy, unlocking opportunities for integrating single-atom catalysts into industrial processes.

ACS Applied Materials & InterfacesVol. 17(34)
Brookhaven National Laboratory (US), California University of Pennsylvania (US), Stanford Synchrotron Radiation Lightsource (US), National Synchrotron Light Source II, University of Pennsylvania (US), Virginia Tech (US), University of Delaware (US)
National Science Foundation, Directorate for Engineering, Basic Energy Sciences
Openalex Percentile: Top 10%
Catalytic Processes in Materials Science
2.59
DOISourceOpenAlex
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