Investigating structural, vibrational, electronic, and optical properties of W <sub>0.5</sub> Mo <sub>0.5</sub> S <sub> 2 <i>x</i> </sub> Se <sub> 2(1− <i>x</i> ) </sub> layered quaternary alloys using <i>ab initio</i> for optoelectronic applications

Abstract This study investigates the structural, vibrational, electronic, and optical properties of W and S co-substituted (W 0.5 Mo 0.5 S 2 x Se 2(1− x ) , where x = 0.25, 0.50, and 0.75) alloy compositions for optoelectronic applications. Employing first-principles calculations through the Quantum Espresso platform, we investigated how incorporating W and S influences the hexagonal crystal structure of 2H-MoSe 2 . The study demonstrates that the simultaneous substitution of W and S notably affects the material’s properties, including lattice parameters, bandgap, and optical absorption (extinction coefficient). The calculated equilibrium lattice parameters for both 2H-MoSe 2 and W/S co-substituted materials show strong agreement with experimental results and previously reported theoretical data. In the phonon spectra, the absence of negative frequencies in W 0.5 Mo 0.5 S 2 x Se 2(1− x ) indicates that the material is dynamically stable. The calculated bandgaps of these layered materials are lower than the experimental bandgap of the unsubstituted material, indicating enhanced favorability for optoelectronic applications. Additionally, we computed the average isotropic optical properties across all systems and excluded SOC due to its negligible effect on the electronic properties and the high computational cost it entails. The Penn model provides an accurate description for both 2H-MoSe 2 and W 0.5 Mo 0.5 S 2 x Se 2(1− x ) systems.

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Publication Details

Journal
Materials Research Express
Published
2025-08-01
DOI
https://doi.org/10.1088/2053-1591/adfb44
Citations
1
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.73
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article

Investigating structural, vibrational, electronic, and optical properties of W 0.5 Mo 0.5 S 2 x Se 2(1− x ) layered quaternary alloys using ab initio for optoelectronic applications

Desta Regassa Golja, Gashaw Beyene Kassahun, Abebe Belay, Kunsa Haho Habura et al.
1 citations
Materials Research Express
Chalcogenide Semiconductor Thin Films
0.73
article

Investigating structural, vibrational, electronic, and optical properties of W 0.5 Mo 0.5 S 2 x Se 2(1− x ) layered quaternary alloys using ab initio for optoelectronic applications

Desta Regassa Golja, Gashaw Beyene Kassahun, Abebe Belay, Kunsa Haho Habura, Fekadu Tolessa Maremi, Dereje Gelanu Dadi, Tesfaye Feyisa Hurrisa, Melak Birara Dagnaw
article en
1 citations

Abstract

Abstract This study investigates the structural, vibrational, electronic, and optical properties of W and S co-substituted (W 0.5 Mo 0.5 S 2 x Se 2(1− x ) , where x = 0.25, 0.50, and 0.75) alloy compositions for optoelectronic applications. Employing first-principles calculations through the Quantum Espresso platform, we investigated how incorporating W and S influences the hexagonal crystal structure of 2H-MoSe 2 . The study demonstrates that the simultaneous substitution of W and S notably affects the material’s properties, including lattice parameters, bandgap, and optical absorption (extinction coefficient). The calculated equilibrium lattice parameters for both 2H-MoSe 2 and W/S co-substituted materials show strong agreement with experimental results and previously reported theoretical data. In the phonon spectra, the absence of negative frequencies in W 0.5 Mo 0.5 S 2 x Se 2(1− x ) indicates that the material is dynamically stable. The calculated bandgaps of these layered materials are lower than the experimental bandgap of the unsubstituted material, indicating enhanced favorability for optoelectronic applications. Additionally, we computed the average isotropic optical properties across all systems and excluded SOC due to its negligible effect on the electronic properties and the high computational cost it entails. The Penn model provides an accurate description for both 2H-MoSe 2 and W 0.5 Mo 0.5 S 2 x Se 2(1− x ) systems.

Materials Research ExpressVol. 12(8)
University of Johannesburg (ZA), Arba Minch University (ET), Adama Science and Technology University (ET)
Openalex Percentile: Top 25%
Chalcogenide Semiconductor Thin Films
0.73
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