Non-Fourier Photo-Thermo-Elastic Model Based on Fractional Nonlocal Dual-Phase-Lag Heat Conduction Law and Associated Structural Dynamic Response of Heat Shock Semiconducting Plate

Rapid heating technology (e.g., laser etching) is extensively applied in the manufacturing/processing of semiconductor device, where the memory-dependency characteristic and phase-lagging behavior in heat flux and temperature gradient appear to be particularly important. To characterize such a multi-physics coupling phenomenon, this paper aims to establish non-Fourier photo-thermo-elastic model based on fractional nonlocal dual-phase-lag heat conduction, of which the Atangana–Baleanu and Tempered-Caputo fractional derivatives are adopted. The newly developed model applies to the structural dynamic response of a semiconducting plate subjected to transient heating loads. The time-domain solutions of the one-dimensional (1D) multi-variables partial differential equations are solved via a semi-analytical technique based on Laplace transformation. The dimensionless numerical calculation results show that reducing the heat flux fraction parameter can increase the propagation speed of heat waves. Meanwhile, the carrier concentration in the semiconductor increases, and the large deformation and stress concentration in the semiconducting plate are reduced. Reducing the fractional parameter of the temperature gradient will decrease the propagation speed of the heat wave.