Edge Coupled DC-60GHz Differential SPDT MEMS Switch for High-Speed Digital Applications
This paper introduces an edge-coupled differential SPDT MEMS switch for high-speed digital applications over 100 Gbps. Built on an 8 -inch fused silica wafer and hermetically sealed with a fused silica cap, it supports <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{DC}-60 \text{GHz}$</tex> operation. The ohmic contact switch design achieves <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$<1 \text{dB}$</tex> differential insertion loss up to 60 GHz, with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$>15 \text{dB}$</tex> differential return loss and 20 dB differential isolation.
Authors
- Nicholas Yost
- Xu Zhu (ORCID: https://orcid.org/0000-0002-7560-3151)
- S.Q. Yang
Institutions
- Oracle (United States) (US)
Publication Details
- Published
- 2025-06-15
- DOI
- https://doi.org/10.1109/ims40360.2025.11104027
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00