A 16.2-to-22.2-GHz Phased-Array Receiver with –60-to-85 °C Simultaneously Gain and NF Temperature Compensation Supporting 24 Gb/s 64QAM Modulation

This paper presents a 16.2-to-22.2 GHz eightelement phased-array receiver (RX) with simultaneously gain and noise figure (NF) temperature compensation. An analog temperature compensation scheme is proposed, coupled with a gate-inductor-free double-gm-boosting low noise amplifier (LNA), to ensure stable operation from -60°C to 85°C while reducing system's NF. The chip is fabricated in 65nm CMOS process, exhibiting a 25.8 dB peak gain, 2.7 dB NF and 6 GHz bandwidth from 16.2 to 22.2 GHz. Results of temperature-variable measurement over a range of –60-to-85 °C showed 0.6-dB-gain and 0.4-dB-NF variation, along with an EVM value better than 30.6 dBc with 24 Gb/s data rate. To the knowledge of the authors, the work achieves the highest data rate among RXs at similar frequency band in bulk CMOS technology so far.

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Published
2025-06-15
DOI
https://doi.org/10.1109/ims40360.2025.11103993
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
0.00

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article

A 16.2-to-22.2-GHz Phased-Array Receiver with –60-to-85 °C Simultaneously Gain and NF Temperature Compensation Supporting 24 Gb/s 64QAM Modulation

Xintao Li, Dongze Li, Xiangyu Nie, Baoyong Chi et al.
Radio Frequency Integrated Circuit Design
article

A 16.2-to-22.2-GHz Phased-Array Receiver with –60-to-85 °C Simultaneously Gain and NF Temperature Compensation Supporting 24 Gb/s 64QAM Modulation

Xintao Li, Dongze Li, Xiangyu Nie, Baoyong Chi, Wei Deng, Haikun Jia, Ziyuan Guo
article en

Abstract

This paper presents a 16.2-to-22.2 GHz eightelement phased-array receiver (RX) with simultaneously gain and noise figure (NF) temperature compensation. An analog temperature compensation scheme is proposed, coupled with a gate-inductor-free double-gm-boosting low noise amplifier (LNA), to ensure stable operation from -60°C to 85°C while reducing system's NF. The chip is fabricated in 65nm CMOS process, exhibiting a 25.8 dB peak gain, 2.7 dB NF and 6 GHz bandwidth from 16.2 to 22.2 GHz. Results of temperature-variable measurement over a range of –60-to-85 °C showed 0.6-dB-gain and 0.4-dB-NF variation, along with an EVM value better than 30.6 dBc with 24 Gb/s data rate. To the knowledge of the authors, the work achieves the highest data rate among RXs at similar frequency band in bulk CMOS technology so far.

Tsinghua University (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 81%
Radio Frequency Integrated Circuit Design
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A 16.2-to-22.2-GHz Phased-Array Receiver with –60-to-85 °C Simultaneously Gain and NF Temperature Compensation Supporting 24 Gb/s 64QAM Modulation — Xintao Li, Dongze Li, et al. · (2025) | TGRS Research Map | TGRS