A 134 GHz High Efficiency High Power Fundamental Oscillator in 16nm P-FinFET with 12 dBm Output Power and 6.5% DC-to-RF Efficiency

A 134 GHz power oscillator with transmission line coupling was fabricated in the TSMC 16 nm FinFET process. Each core delivers 12 dBm of output power at 6.5 % DC-to-RF efficiency. The extrapolated phase noise is <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$-94 \text{dBc} / \text{Hz}$</tex> at 1 MHz offset, which leads to a FOM of -174 dB. Gate voltage tuning allows a tuning range from 129.2 to 135.4 GHz or 4.6 %. This work had among the highest efficiency and power density of any CMOS power oscillator in D-Band to the best of the author's knowledge.